类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
043641ARLAD-6PRochester Electronics |
256KX18 SRAM |
|
M95020-RMB6TGSTMicroelectronics |
IC EEPROM 2KBIT SPI 8UFDFPN |
|
CY7C128A-25VCRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOJ |
|
S26HS512TGABHI000Cypress Semiconductor |
IC FLASH 512MBIT SPI 24FBGA |
|
GVT71128E36T-9Rochester Electronics |
IC SRAM 4MBIT 90MHZ |
|
24LC025T-E/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DFN |
|
041841QLAD-6Rochester Electronics |
256KX18 SRAM |
|
AS6C6416-55TINTRAlliance Memory, Inc. |
IC SRAM 64MBIT PARALLEL 48TSOP I |
|
CY7C1412BV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS43DR81280C-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
MWS5101AEL2Rochester Electronics |
256X4-BIT STANDARD SRAM |
|
CY7C1041BN-15VIRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
CY7C1366A-166AJCRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |