类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT93C46S-1.8Rochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS42S16320F-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
BR93G46FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
043640QKAA-4PRochester Electronics |
4MB (128KB X 36) SRAM |
|
S29CD032J1JFAM010Rochester Electronics |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
AT28HC256-70JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
CY7C1414BV18-200BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
FM25C040ULZEM8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
CY14B104NA-ZS20XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
S29GL256P11FFI012Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
S25FL128SAGMFVR03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C13121KV18-300BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1165KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |