English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | 24CW |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.6V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61NVF51236B-6.5TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY7C1019DV33-10BVXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
S29GL032N11FFIS32Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S29GL256S90FHI020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
24LC512-I/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
S25FL064P0XMFA000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IS43R32800D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144LFBGA |
|
AS7C164A-15JCNAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
70T3519S133BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
MT41K256M8DA-107 AAT:KMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
70V3389S5BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
71V416L10BEIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
93C46C-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
