English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 4.5 µs |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29RZ4B2DZZHHWD-18I.84F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
BR24T128FJ-WE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SOPJ |
|
NM93C46LM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
AT28HC64B-90TU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
CAT93C46RYI-GRochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8TSSOP |
|
R1LV0216BSB-5SI#S1Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
W25Q16JWSSIM TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
SST26VF064B-104I/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |
|
S25FL128SAGBHBA00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
M24C64-WMN6PSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8SO |
|
24LC01BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
AS4C8M16SA-6TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
MC10H145PRochester Electronics |
STANDARD SRAM, 16X4, 6NS, ECL |
