类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8, 512 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V416S15YIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S34MS02G100TFI000Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
MT29F2G08ABAEAWP-AATX:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
CY7C131-55NCRochester Electronics |
DUAL-PORT SRAM, 1KX8 |
|
CY7C1345G-100BGXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MR25H256CDCEverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |
|
SN74ACT2150A-20NTRochester Electronics |
CACHE TAG SRAM, 512X8, 20NS |
|
CAT25256HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8UDFN |
|
UPD44325184BF5-E33-FQ1Rochester Electronics |
QDR SRAM, 2MX18, 0.45NS |
|
CY7C1399BN-12VCRochester Electronics |
STANDARD SRAM, 32KX8, 12NS |
|
S29CD016J0JQFM110Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
CY7C1370KV33-167AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
W25Q512JVEIQWinbond Electronics Corporation |
IC FLASH 512MBIT SPI/QUAD 8WSON |