类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7164S25DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
25LC080T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |
|
CY62256NLL-70ZIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
93AA46CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8TDFN |
|
BR24C32-WMN6TPROHM Semiconductor |
IC EEPROM 32KBIT I2C 400KHZ 8SO |
|
S29GL128P10FFI012Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS42RM32400H-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
24LC16BH-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CAT24C02WI-GARochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
STK11C68-SF25Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28SOIC |
|
24C02A-E/PRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ |
|
MT29F1G08ABAEAWP-AATX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
AS4C8M16D1A-5TINTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |