







IC SRAM 4MBIT PARALLEL 44SOJ
WE-MCA SMT-MULTILAYER CHIP ANTEN
SENS 200PSI 22MM M10-1.0 6G 1-5V
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SST39VF802C-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
|
70T3319S133BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
|
BR25A512FVT-3MGE2ROHM Semiconductor |
IC EEPROM 512KBIT SPI 8TSSOP |
|
|
CY14ME064Q2A-SXQTCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
|
IS45S16320F-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
|
AS8C403601-QC166NAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
|
IS43R16160D-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
|
S29GL064N90FFI013Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
|
CY62137CV30LL-70BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
|
MT29F4G01AAADDHC-ITX:DFlip Electronics |
IC FLASH 4GBIT SPI 63VFBGA |
|
|
CY7C188-25VCTRochester Electronics |
STANDARD SRAM, 32KX9, 25NS |
|
|
MT53B128M32D1DS-062 AIT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
|
DS1270W-150Rochester Electronics |
IC NVSRAM 16MBIT PARALLEL 36EDIP |