类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V432S6PFIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
25LC640AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
S29GL256P90TFIR23Rochester Electronics |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT25DF011-MAHNGU-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8UDFN |
|
S29GL032N11FFIV10Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
25LC320-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8SOIC |
|
W25Q80EWSVIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8VSOP |
|
MX25U4035FM1IMacronix |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
IS46R86400D-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
UPD44165182BF5-E40-EQ3Rochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CY7C2565XV18-633BZXCRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
IS34ML02G084-TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
DS1220AD-200Rochester Electronics |
IC NVSRAM 16KBIT PARALLEL 24EDIP |