类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL032P0XBHI030Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
W25X10CLSNIG TRWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
|
S26KS256SDPBHB023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
CY7C1414KV18-250BZXITCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT41K64M16TW-107:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MSM5117400F-60T3-K-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL KBU |
|
04364ARLAC-6FRochester Electronics |
4MB (128KB X 36) SRAM |
|
CY621472E30LL-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CYD04S72V-133BBCRochester Electronics |
IC SRAM 4MBIT PARALLEL 484FBGA |
|
CY7C1069BV33-12ZCRochester Electronics |
STANDARD SRAM, 2MX8, 12NS PDSO54 |
|
RMLV0408EGSB-4S2#AA0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
NDS73PT9-16ETInsignis Technology Corporation |
IC DRAM 128MBIT PAR 86TSOP II |
|
CY7C25652KV18-450BZCRochester Electronics |
QDR SRAM, 2MX36, 0.45NS, CMOS, P |