类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | SC-74A, SOT-753 |
供应商设备包: | SOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V35761S166BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S25FS256SDSNFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CAT25C128SIRochester Electronics |
IC EEPROM 128KBIT SPI 5MHZ 8SOIC |
|
S29GL032N90FFI030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S29GL01GS11DHI020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT25QL01GBBB1EW9-0SITMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 8WPDFN |
|
R1LV5256ESA-5SI#S1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
IS61LPS25618EC-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
IS64WV12816EDBLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1615KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
W948D6KBHX5I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
SST39VF020-70-4C-NHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
W949D2DBJX5EWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 90VFBGA |