类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8 , 64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46R16320D-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
70T633S10BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
QS7025A-25JRochester Electronics |
IC SRAM 128KBIT 40MHZ |
|
R1LP0108ESP-5SI#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
S25FL064LABBHV020Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
25AA080-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8DIP |
|
IS43LD16640C-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
AT24C08D-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ SOT23-5 |
|
CY7C1612KV18-333BZCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
RM24C32C-LTAI-BAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8TSSOP |
|
CY62157CV33LL-70BAIRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
IS42S32400F-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AS4C32M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |