类型 | 描述 |
---|---|
系列: | WS-P |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 60ns |
访问时间: | 80 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-VFBGA |
供应商设备包: | 84-FBGA (11.6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71T75702S75PFGIRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
|
AS4C8M16SA-7BCNAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
CY7C1262XV18-450BZXCCypress Semiconductor |
NO WARRANTY |
|
CY7C1481BV33-133AXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
X28C010RMB-25Rochester Electronics |
EEPROM, 128KX8, PARALLEL |
|
S29GL512S11DHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
S29GL01GS10DHSS13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CAT28LV65J-25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
CY7C1520KV18-250BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V416YL10BERochester Electronics |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
71V256SA15YGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
BR24L16FVM-WTRROHM Semiconductor |
IC EEPROM 16KBIT I2C 8MSOP |
|
TC58NVG2S0HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP I |