类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 250 kHz |
写周期时间 - 字,页: | 15ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11AA080-I/TORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE TO92-3 |
|
MT53D512M32D2DS-053 WT:D TRMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
93C46AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
PC28F320J3F75AFlip Electronics |
IC FLASH 32MBIT PAR 64EASYBGA |
|
TH58BYG3S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT PARALLEL 63TFBGA |
|
25LC160DT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
R1QAA7218ABB-20IA0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
5962-9089904MYARochester Electronics |
FLASH, 128KX8, 120NS, CQCC32 |
|
71256SA20PZRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
AS4C4M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
25AA128T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIJ |
|
25LC640T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
MT54W512H36BF-7.5Rochester Electronics |
QDR SRAM, 512KX36, 0.5NS PBGA165 |