类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GS816236DGD-250IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
FM25040B-GRochester Electronics |
IC FRAM 4KBIT SPI 20MHZ 8SOIC |
|
MX25U1635FM2I-10GMacronix |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
SST26VF040A-104I/MFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI/QUAD 8WDFN |
|
71V35761S166PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70V3379S6BC8Renesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
BR24A08FJ-WME2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOPJ |
|
71V3556SA150BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1512AV18-200BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S26KS512SDGBHM030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CY62146GE30-45ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SST39LF802C-55-4C-MAQERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
CY7C1418KV18-250BZICypress Semiconductor |
NO WARRANTY |