类型 | 描述 |
---|---|
系列: | FL-P |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 5µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S86400F-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
24FC64-I/MFRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8DFN |
|
93LC56A-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
IS61QDPB42M36A2-500M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
93LC56CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8MSOP |
|
SST39VF040-70-4C-WHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
71V65703S75PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S34MS16G202BHI000Rochester Electronics |
IC FLASH 16GBIT PARALLEL 63BGA |
|
71V65803S100BGGRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1041DV33-10VXIFlip Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY7C1370D-250AXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C194BN-15PCRochester Electronics |
IC SRAM 256KBIT PARALLEL 24DIP |
|
IS61NLP25618A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |