类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
X28C010DMB-12Rochester Electronics |
EEPROM, 128KX8, PARALLEL |
|
70T3589S133BFI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
93LC56A/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
25LC160CT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
W25Q256JVFIMWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
25LC080/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |
|
7164L25TDBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
IS49RL18320-107EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
CY7C1362A-150ACTRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
SST25VF010A-33-4I-QAE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 33MHZ 8WSON |
|
FM24VN10-GTRCypress Semiconductor |
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
CY7C1470BV25-200BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
N25Q032A13EF640FAlliance Memory, Inc. |
IC FLSH 32MBIT SPI 108MHZ 8WPDFN |