类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.15V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62148DV30L-70BVIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
CY7C2263KV18-550BZXCCypress Semiconductor |
NO WARRANTY |
|
BR24G128FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IS42SM16800H-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
SST39VF402C-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
CY7C0832AV-167BBCRochester Electronics |
DUAL-PORT SRAM, 256KX18, 4NS |
|
MX25L25673GMI-08GMacronix |
IC FLSH 256MBIT SPI 120MHZ 16SOP |
|
S29WS256P0SBFW002Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
|
IS42RM32800E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
25LC080DT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
24VL014T/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-6 |
|
CY14B101L-SZ35XCRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
|
AT45DB081E-SHNHA-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |