类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23A512-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
IS42S16160J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL256S10DHAV23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY7C1460AV33-167BZCRochester Electronics |
ZBT SRAM, 1MX36, 3.4NS, CMOS, PB |
|
CY7C1018BV33-12VCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
IS42RM32160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
93AA66AXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
SST25VF080B-50-4I-QAE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 50MHZ 8WSON |
|
W9812G6KH-6I TRWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY14B116L-ZS25XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 44TSOP II |
|
CY7C1009B-15VCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
CY7C1163KV18-550BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
W631GU8MB-15Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |