English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 1.152Mb (64K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 120-LQFP |
| 供应商设备包: | 120-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24AA01HT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
AS4C8M32SA-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT27C4096-90JU-TRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
71T75602S150PFG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C10212CV33-12BAXERochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
AS6C4008A-55TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
CY7C1314BV18-200BZXCRochester Electronics |
QDR SRAM, 512KX36, 0.45NS |
|
24LC02BHT-E/LTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SC70-5 |
|
BR93G66F-3AGTE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8SOP |
|
CY7C1362A-166ACTRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
S29PL127J80TFI090Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
GD25WD05CTIGRGigaDevice |
IC FLASH 512KBIT SPI/QUAD 8SOP |
|
CY7C2245KV18-450BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
