English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 6ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RMLV0408EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C09349AV-12ACRochester Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
71V432S7PFGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAT24FC64WI-TE13Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
IS42S16160J-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
FM93C06EM8XRochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
IS25LP512M-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
MT40A256M16LY-062E:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S-24CS16A0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY62136CV30LL-70BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
71V65903S80BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24LC64T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |
|
CY7C1324A-117ACRochester Electronics |
STANDARD SRAM, 128KX18 |
