English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 9Mb (128K x 72) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.4 ns |
| 电压 - 电源: | 1.42V ~ 1.58V, 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 484-BGA |
| 供应商设备包: | 484-FBGA (23x23) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1LV3216RSD-5SR#B0Rochester Electronics |
STANDARD SRAM, 2MX16, 55NS |
|
CY7C10612G30-10ZSXITCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
MT48LC16M16A2B4-6A AAT:GFlip Electronics |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
71V3556SA100BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY62187EV30LL-55BAXITCypress Semiconductor |
IC SRAM 64MBIT PARALLEL 48FBGA |
|
IS25WP256D-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SERIAL 16SOIC |
|
24AA08HT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
IS43LR16320B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
MT46H32M16LFBF-5 AIT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
CY7C15632KV18-450BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
STK14D88-NF45TRRochester Electronics |
IC NVSRAM 256KBIT PAR 32SOIC |
|
AS5F32G04SND-08LINAlliance Memory, Inc. |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
CY7C1321KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
