类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC080D-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 5MHZ 8SOIC |
|
CAT24C21WI-GT3Rochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
71V67703S80PFIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140SA35CBRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
MT41K256M16TW-107 AIT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
70T3519S166BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
MR48V256ATAZBARLROHM Semiconductor |
IC FRAM 256KBIT PAR 28TSOP I |
|
CYD18S72V18-200BGCRochester Electronics |
DUAL-PORT SRAM, 256KX72, 9NS |
|
CY7C199-8ZCTRochester Electronics |
SRAM 256K-BIT 32K X 8 8NS |
|
S25FL512SAGMFMG10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
MT52L256M32D1PF-107 WT:BMicron Technology |
IC DRAM 8GBIT 933MHZ 178FBGA |
|
SST39VF1682-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
R1LV0816ABG-5SI#B0Rochester Electronics |
STANDARD SRAM, 512KX16, 55NS |