类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC515-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
S25FL128SDSBHA213Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
24VL024/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
AS4C4M32D1A-5BCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 144LFBGA |
|
S25FL256SAGBHVA03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
93AA46C-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
|
70T659S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S29GL512S10FHI013Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64BGA |
|
IS42S16320F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
24FC256-I/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
BU9844GUL-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C VCSP50L1 |
|
R1LV3216RSA-7SR#B0Rochester Electronics |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
CY7C1568KV18-500BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |