English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1270KV18-400BZXCRochester Electronics |
DDR SRAM, 1MX36, 0.45NS PBGA165 |
|
93LC46CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
93C56BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
CY7C09389V-9AXIRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
CY7C1021CV33-15BAIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
IS61DDPB41M18A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
AT24C08D-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8SOIC |
|
FM24C02ULM8XRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
CY7C1021BV33L-15ZXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
RM25C64DS-LSNI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 20MHZ 8SOIC |
|
RM25C256DS-LTAI-BAdesto Technologies |
IC CBRAM 256KBIT SPI 8TSSOP |
|
71V35761S166PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70T3399S200BCRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
