类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62147DV30LL-70ZSXITRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
S25FL128LDPMFB003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
70T3599S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY62137VLL-70BAIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
AS4C8M32S-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 86TSOP II |
|
CY62256NLL-55SNXITFlip Electronics |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
CY62256VL-70ZIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
IS62WV102416EBLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
IS62WV25616BLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
IS62WV25616BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
S29GL512S12DHIV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
AT25XE041B-XMHN-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8TSSOP |
|
IS42S16100H-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |