English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 512Kb (32K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V30L25TFG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MR0A16AMA35REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
MR2A16AYS35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 44TSOP2 |
|
W25Q128JVCIMWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
24AA01H-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
GS82582QT37GE-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
6116SA25SOGRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
W631GU6MB11IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS64WV12816DBLL-12CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1339-166ACRochester Electronics |
CACHE SRAM, 128KX32, 3.5NS |
|
93LC46X-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
71V67803S166BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS46TR16128D-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
