English
简体中文
IC NVSRAM 256KBIT PAR 28EDIP
SENSOR PRES 15PSI GAUG 3.3V SMT
IC TRANSCEIVER FULL 1/1 14SOIC
IC REG LINEAR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 28-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C32M16D1A-5TANTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
AS6C3216-55BINAlliance Memory, Inc. |
IC SRAM 32MBIT PARALLEL 48TFBGA |
|
25LC040AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
W29GL512SL9B TRWinbond Electronics Corporation |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
IS61LPS204836B-166TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
IS43LR32400G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
SST39SF010A-55-4I-WHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
NV25010DWHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
R1WV6416RSA-5SR#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 55NS |
|
NM93C56LZENRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
24LC024H-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
FEMC008GTTG7-T13-16Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
7133SA35PFGRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |