类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RMLV0416EGBG-4S2#AC0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48FBGA |
|
24LC04BH-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
SST26VF080A-104I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
AT28HC64B-90TURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
CY7C1041BV33L-20ZIRochester Electronics |
256K X 16 SRAM |
|
DS2502+Maxim Integrated |
IC EPROM 1KBIT 1-WIRE TO92-3 |
|
IS45S16160J-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
BR25040-10TU-1.8ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
24LC512-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
MX25L6473EZNI-10GMacronix |
IC FLASH 64MBIT SPI 104MHZ 8WSON |
|
71V65602S133PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V424L12PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71V416VS12PHGIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |