English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1263V18-400BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS7C1024B-20TJINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
M24C08-RMN6TPSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8SO |
|
IS42S16400J-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
S29GL256S11FHIV20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
TH58NVG3S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT PARALLEL 63TFBGA |
|
CY7C1315KV18-250BZCCypress Semiconductor |
NO WARRANTY |
|
FM93C66LM8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
70T3509MS133BPIRenesas Electronics America |
IC SRAM 36MBIT PARALLEL 256CABGA |
|
71V3577S80BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS62WV10248EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
IS49RL36160-093BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
CY7C136A55JXIRochester Electronics |
DUAL-PORT SRAM, 2KX8, 55NS |
