English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62138FV30LL-45ZAXARochester Electronics |
STANDARD SRAM, 256KX8, 45NS PDSO |
|
CAT25020LIRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
IS62WV51216EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
FM24C09ULZEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
MT40A1G8WE-083E AIT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
MT58L256L18F1T-10ITRochester Electronics |
CACHE SRAM 256KX18 10NS PQFP100 |
|
71V65703S80BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
70121L25JG8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
AT25080AN-10SQ-2.7Rochester Electronics |
EEPROM, 1KX8, SERIAL, CMOS |
|
CY27C512-70ZCRochester Electronics |
OTP ROM, 64KX8, 70NS PDSO28 |
|
25AA640A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8MSOP |
|
AS7C34098A-10BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
MWS5114D2Rochester Electronics |
1024X4-BIT STANDARD SRAM, |
