类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II+ |
内存大小: | 36Mb (2M x 18) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C2270KV18-550BZXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71V67603S150BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS7C1026B-15JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
S29GL512T12TFVV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
SST39VF402C-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
71V67703S80BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1381KV33-133AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1413KV18-250BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V3389S5BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
NV24C16MUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8UDFN |
|
93AA56C-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DIP |
|
CAT24C512XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
SST26VF080A-104I/MFRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8WDFN |