类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 8Mb (512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 45 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24C32WGI-26751Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
70V3599S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
IS43LR32400G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
25LC128X-E/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
SST25VF020B-80-4I-SAE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8SOIC |
|
FM27C256V120Rochester Electronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
IS43DR86400C-25DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
GS832136AGD-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
71V3559S85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
54F189DCRochester Electronics |
STANDARD SRAM, 16X4, 27NS |
|
GT28F320C3TA110 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
25AA640-I/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ 8DIP |
|
7054L20PRFG8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 128TQFP |