类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL512SDSMFV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
24LC16B/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CAT93C56W-TE13Rochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MB85RS2MTAPNF-G-BDERE1Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 40MHZ 8SOP |
|
CY7C194BN-15VCRochester Electronics |
IC SRAM 256KBIT PARALLEL 24SOJ |
|
MX25U25645GZ4I00Macronix |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
AS7C256A-20JCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT29F16G08ABCCBH1-10ITZ:C TRMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |
|
71V3557S75BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S29CD032J0MQFI000Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80PQFP |
|
MX30LF1G08AA-TIMacronix |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
CY7C1049CV33-12VCRochester Electronics |
STANDARD SRAM |
|
HN58V65AT10SRERochester Electronics |
64K EEPROM (8KWORD X 8-BIT) |