English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-DIP (0.300", 7.62mm) |
| 供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V3557S80PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
LE2432RDXATDGRochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 6WLCSP |
|
MT58L1MY18FT-8.5Rochester Electronics |
CACHE SRAM, 1MX18, 8.5NS PQFP100 |
|
93AA76AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
FM93C56AM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
CAT28LV64LI20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
CY7C1313AV18-167BZCRochester Electronics |
QDR SRAM, 1MX18, 0.5NS |
|
AS4C256M8D3LC-12BINAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
CY7C1512-25SCRochester Electronics |
STANDARD SRAM, 64KX8, 25NS |
|
AS7C1026B-12TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
71V67603S166PF8Rochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MX25U51245GZ4I54Macronix |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
93AA66BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
