English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-BSSOP (0.295", 7.50mm Width) |
| 供应商设备包: | 48-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71256L100TDBRochester Electronics |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
BR25H080F-WCE2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8SOP |
|
IS42S32200L-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
CAT64LC40WIRochester Electronics |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
70V05L15JG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
71V65603S100PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT25040VI-TE13Rochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
AS4C4M32SA-7TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
25LC320AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
MT29F512G08EBHAFJ4-3ITFES:A TRMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
CY7C1515KV18-300BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS25LP032D-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
CY62146DV30LL-70ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
