类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7005L15JGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
24LC64T-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
SST39VF040-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
BR24G04FVJ-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 8TSSOP |
|
AS4C64M8D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
93LC66B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
AT25PE20-SSHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 85MHZ 8SOIC |
|
MT58V512V36FT-7.5Rochester Electronics |
CACHE SRAM, 512KX36, 7.5NS PQFP1 |
|
S25FL032P0XBHIS30Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 24BGA |
|
71V546S133PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M24C04-WMN6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
CY7C0853V-100BBCRochester Electronics |
IC SRAM 9MBIT PARALLEL 172FBGA |
|
S29GL256P90TFCR23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |