类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25WP128-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MX25L3233FZNI-08GMacronix |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
BR24L01AFVT-WE2ROHM Semiconductor |
IC EEPROM 1K I2C 400KHZ 8TSSOP |
|
CY7C1041GE-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
93LC66CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TDFN |
|
IS42S16400J-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
CAT24AA04WI-GRochester Electronics |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
CY7C1361C-100AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7142LA55CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
70T651S12BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
S25FL256LDPBHI033Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
25C320T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
AS7C1025B-12JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |