类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
供应商设备包: | 32-sTSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC01BT/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
IS43LD32640B-25BPLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
W947D6HBHX6EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 60VFBGA |
|
AS7C34098A-10BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY7C1353B-66ACRochester Electronics |
ZBT SRAM, 256KX18, 11NS |
|
24LC08B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
IS61NLP102418B-250B3L-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S29GL128P11FFIV22Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
HM1-6518B-9Rochester Electronics |
1024 X 1 CMOS RAM |
|
S25FL032P0XNFV000Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
S29GL512S11FAIV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
S25FL132K0XNFI013Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MT55V512V32PT-5Rochester Electronics |
ZBT SRAM, 512KX32, 3.2NS PQFP100 |