English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1319KV18-250BZXCRochester Electronics |
DDR SRAM, 1MX18, 0.45NS PBGA165 |
|
71V25761S166PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
BR24L08F-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
24LC01BT/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
IS61NLP25636B-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
GD25LD40CTIGGigaDevice |
IC FLASH 4MBIT SPI/DUAL I/O 8SOP |
|
CY7C1049BV33L-15VCTRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
IS45S16320F-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V424S10PHG8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1145KV18-400BZXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CDP1824CD/BRochester Electronics |
CDP1824CD/B |
|
S25FL512SAGBHVB13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
FM25V20A-GCypress Semiconductor |
IC FRAM 2MBIT SPI 40MHZ 8SOIC |
