类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
23LCV1024-I/SNRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/DUAL I/O 8SOIC |
|
IS42S32800J-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
CY7C026AV-25ACRochester Electronics |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
71V256SA15YIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY15B101N-ZS60XACypress Semiconductor |
IC FRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C1021CV33-10ZXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
M95128-DRMN3TP/KSTMicroelectronics |
IC EEPROM 128KBIT SPI 20MHZ 8SO |
|
IS61VPS51236B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
CY7C1148KV18-450BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
71421LA20PFGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MCM69C233TQ15Rochester Electronics |
CONTENT ADDRESSABLE SRAM, 4KX64, |
|
SST39VF400A-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
SST25VF010A-33-4C-SAERoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 33MHZ 8SOIC |