类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29AS008J70BFA042Rochester Electronics |
IC FLASH 8MBIT PARALLEL 48FBGA |
|
CY7C131-25JXCTRochester Electronics |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
S29GL064N11FFIV20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
TM27PC256-2NLRochester Electronics |
OTP ROM, 32KX8, 200NS, PDIP28 |
|
CY62137BV18LL-70BAIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
IS43R16320E-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
71V25761S166PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62167GE30-45BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48BGA |
|
SST39VF3202-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
BRCG064GWZ-3E2ROHM Semiconductor |
IC EEPROM 64K I2C UCSP35L1 |
|
S29GL256P11FFI020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
FM24C64LM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
AF064GEC5X-2001A2ATP Electronics, Inc. |
IC 64GBIT 153BGA |