类型 | 描述 |
---|---|
系列: | MX29F |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC66C-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
CY7C1041CV33-20ZIRochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
BR24L02FVT-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOPB |
|
47C16-E/STRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8TSSOP |
|
MR3A16ACYS35REverspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 54TSOP2 |
|
24LC02BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AS4C64M16D3B-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
IS45S16800F-7TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT45DB041E-MHN-YAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
GD25VQ40CSIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
FM21LD16-60-BGRochester Electronics |
IC FRAM 2MBIT PARALLEL 48FBGA |
|
71V3559S80PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W25Q20EWSNIG TRWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8SOIC |