类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O, QPI, DTR |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 1.6ms |
访问时间: | - |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25V8035FM1QMacronix |
IC FLASH 8MBIT SPI 104MHZ 8SOP |
|
24AA02H-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
M95640-DRMF3TG/KSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8MLP |
|
93C56CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TDFN |
|
24FC1026-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIJ |
|
S29GL512S10FHSS50Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
93LC66BXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
CY7C2568KV18-500BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS4C4M32D1A-5BCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 144LFBGA |
|
IS62WV5128EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
MC68HC11L1FURochester Electronics |
MICROCONTROLLER, 8 BIT, HC11 CPU |
|
THGBMJG8C4LBAU8Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 32GBIT EMMC 153FBGA |
|
S29GL512T12DHN010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |