English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP-B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62158DV30LL-70ZSXIRochester Electronics |
STANDARD SRAM, 1MX8, 70NS |
|
MT46H16M32LFB5-6 AT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
FM24C16UFLM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
LE25S20MB-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT SPI 8SOIC/SOP |
|
AT25XV041B-MHV-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
MT29F256G08AUCABH3-10ITZ:AMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |
|
93C56CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TDFN |
|
AT24C512C-SHM-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
IS49NLC18160-33WBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
AT24C64D-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
7142SA35CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
MT29F256G08EBHAFJ4-3R:AMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
CY7C1346H-166AXCTRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
