类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL064N90FFIS12Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
BR24G32F-3AGTE2ROHM Semiconductor |
IC EEPROM 32K I2C 1MHZ 8SOP |
|
CY7C0850AV-167BBCRochester Electronics |
DUAL-PORT SRAM, 32KX36, 4NS |
|
NV24C128MUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KBIT I2C 1MHZ 8UDFN |
|
93C46BT/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
S-25C160A0I-K8T3U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 5MHZ 8TMSOP |
|
34AA02T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
MT29AZ5A3CHHWD-18AIT.84F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |
|
23A640T-I/STRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8TSSOP |
|
R1Q3A7236ABB-33IA0Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
GD25VE16CEIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
S25FL064P0XMFV001Flip Electronics |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
S25FL512SAGBHB210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |