English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25DL081-MHN-YAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8UDFN |
|
25LC020A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
S25FL256SAGBHMC00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
UPD46365094BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
MX29GL640ETXEI-70GMacronix |
IC FLASH 64MBIT PARALLEL 48LFBGA |
|
W987D6HBGX6I TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
24AA1025-I/PRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8DIP |
|
71V65903S85BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT29F2G08ABAGAWP-AATES:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
25LC080DT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
MT41K1G4DA-107:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IS43LR16640A-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
93C76C-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
