类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (256 x 8 x 4) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W631GU6MB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS61NLP25636B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
S25FL032P0XMFB013Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CYDM128B08-55BVXIRochester Electronics |
IC SRAM 128KBIT PAR 100VFBGA |
|
IS42S32400F-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S25FL256SDPNFB003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
DS1220AD-150Rochester Electronics |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
71421LA25PFGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
IS61LPS51218A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C64-DRMF3TG/KSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8MLP |
|
IS26KL128S-DABLI00ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 24VFBGA |
|
S25FL256SAGMFV011Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT93C66B-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |