English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (1K x 8, 512 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 6.0V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST39VF1601-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
CAT93C46BWI-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
24AA256T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
71124S20YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY62147EV18LL-55BVXITRochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
MT29F1T08EEHAFJ4-3R:AMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
CYD09S72V18-167BBXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
CY62146GE30-45BVXIRochester Electronics |
STANDARD SRAM, 256KX16, 45NS PBG |
|
CY14E101Q2A-SXIRochester Electronics |
NON-VOLATILE SRAM, 128KX8, CMOS, |
|
FT25C64A-USR-TFremont Micro Devices |
IC EEPROM 64KBIT SPI 20MHZ 8SOP |
|
RMLV0414EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71V547S100PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62126DV30LL-55ZXIRochester Electronics |
STANDARD SRAM, 64KX16, 55NS |
