类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FRAM |
技术: | FRAM (Ferroelectric RAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.8V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46V16M16CY-5B IT:MMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
CY7C1399B-15VIRochester Electronics |
CACHE SRAM, 32KX8, 15NS PDSO28 |
|
IS45S32400F-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
71V67603S133BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S29JL032J70BHI323Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
SST39VF400A-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
CY7C144E-55AXCFlip Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
IS42VM32160E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
71T75602S166BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
MT29F1G08ABAEAH4-AATX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
CAT24C256YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT I2C 8TSSOP |
|
AS6C6416-55BINAlliance Memory, Inc. |
IC SRAM 64MBIT PARALLEL 48TFBGA |
|
CAT25160VE-GT3Rochester Electronics |
CAT25160 - 16-KBIT SPI SERIAL EE |