English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Kb (128 x 8, 64 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS62C5128BL-45QLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32SOP |
|
25LC080C-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8DIP |
|
CY7C1360A1-150AJCRochester Electronics |
STANDARD SRAM, 256KX36 |
|
24AA512-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
S29AS016J70BFI032Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
EDB8132B4PM-1D-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 168FBGA |
|
70V3579S4BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
25LC320-E/PRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8DIP |
|
NM24C17NRochester Electronics |
IC EEPROM 16KBIT I2C 100KHZ 8DIP |
|
DS1230YP-100+Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
CYD36S72V18-200BGXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 484FBGA |
|
CY7C1069G-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
70V639S15BF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 208CABGA |
